BUK98150-55A Datasheet | NXP Semiconductors

Description N-channel enhancement mode field-effect power transistor in a plastic package using Trench MOS™1 technology, featuring very low on-state resistance. Product availability: BUK98150-55A in SOT223 (SC-73). 2. Features s s s s Trench MOS™ technology Q101 pliant 150 °C rated Logic level patible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223 (SC-73), simplified outline and symbol Description gate (g) Simplified outline Symbol d drain (d) source (s) drain (d) MBB076 g s Top view MSB002 - 1 SOT223 (SC-73) 1. Trench MOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors Trench MOS™ logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tsp = 25 °C; VGS = 5 V Tsp = 25 °C VGS = 5 V; ID = 5 A VGS = 4.5 V; ID = 5 A VGS = 10 V; ID = 5 A Typ 128 116 Max 55 5 8 150 150 161 137 Unit V A W °C drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter mΩ mΩ mΩ 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IDR IDRM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature reverse drain current (DC) peak reverse drain current Tsp = 25 °C Tsp = 25 °C; pulsed; tp ≤ 10 µs unclamped inductive load; ID = 5 A; VDS ≤ 55 V; VGS = 5 V; RGS = 50 Ω; starting Tj = 25 °C Tsp = 25 °C; VGS = 5 V; Figure 2 and 3 Tsp = 100 °C; VGS = 5 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 RGS = 20 kΩ Conditions Min - 55 - 55 Max 55 55 ±15 5 3 22 8 +150 +150 5 22 31 Unit V V V A A A W °C °C A A m J Source-drain...