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BUK98150-55A - TrenchMOS logic level FET

General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK98150-55A in SOT223 (SC-73).

2.

Key Features

  • s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3.

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Full PDF Text Transcription (Reference)

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BUK98150-55A TrenchMOS™ logic level FET M3D087 Rev. 02 — 25 March 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK98150-55A in SOT223 (SC-73). 2. Features s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223 (SC-73), simplified outline and symbol Description gate (g) 4 Simplified outline Symbol d drain (d) source (s) drain (d) MBB076 g s 1 Top view 2 3 MSB002 - 1 SOT223 (SC-73) 1.