NXP Semiconductors BUK9875-100A
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.| Part No. | BUK9875-100A |
|---|---|
| Datasheet | BUK9875-100A Download |
| Manufacturer |  NXP Semiconductors |
| Description | N-channel TrenchMOS logic level FET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low conduction losses due to low on-state resistance● Q101 compliant
● Suitable for logic level gate drive sources 3.
APPLICATIONS
● 12 V, 24 V and 42 V loads● Automotive and general purpose power switching
● Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C ID drain current VGS = 5 V; Tsp = 25 °C; Fig. 2; Fig. 3 Ptot total power dissipation Tsp = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 8 A; Tj = 25 °C VGS = 10 V; ID = 8 A; Tj = 25 °C VGS = 5 V; ID = 8 A; Tj = 25 °C; Fig. 12; Fig. 13 Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy ID = 7 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Min Typ Max Unit - - 100 V - - 7A - - 8W - - 84 mΩ - 62 72 mΩ - 64 75 mΩ - - 49 mJ Scan or click this QR code to view the latest information for this product NXP Semiconductors BUK9875-100A N-channel TrenchMOS logic level FET 5.
