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BUK9880-55A - TrenchMOS logic level FET

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Product availability: BUK9880-55A in SOT223 (SC-73).

2.

Features

  • s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3.

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Datasheet Details

Part number BUK9880-55A
Manufacturer NXP Semiconductors
File Size 321.61 KB
Description TrenchMOS logic level FET
Datasheet download datasheet BUK9880-55A Datasheet
Additional preview pages of the BUK9880-55A datasheet.

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BUK9880-55A TrenchMOS™ logic level FET M3D087 Rev. 01 — 07 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance. Product availability: BUK9880-55A in SOT223 (SC-73). 2. Features s s s s TrenchMOS™ technology Q101 compliant 150 °C rated Logic level compatible. 3. Applications s Automotive and general purpose power switching: x 12 V and 24 V loads x Motors, lamps and solenoids. c c 4. Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223 (SC-73), simplified outline and symbol Description gate (g) 4 Simplified outline Symbol drain (d) source (s) drain (d) 1 Top view d g 2 3 MSB002 - 1 MBB076 s SOT223 (SC-73) 1.
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