BUK9E06-55B Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very low on-state resistance.
BUK9E06-55B Datasheet
| Part number | BUK9E06-55B |
|---|---|
| Download | BUK9E06-55B Datasheet (PDF) |
| File Size | 154.65 KB |
| Manufacturer | NXP Semiconductors |
| Description | (BUK9x06-55B) N-channel TrenchMOSTM logic level FET |
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