BUW11W Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e BUW11W; BUW11AW APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. MBB008 2 1 3 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter MBK117 Fig.1 Simplified outline (SOT429) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 5 10 100 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1.25 UNIT K/W 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW ICsat collector saturation current BUW11W BUW11AW IC ICM IB IBM Ptot Tstg Tj collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature junction temperature tp < 2 ms Tmb ≤ 25 °C; see Fig.3 see Figs 2 and 4 tp < 2 ms; see Fig 2 open base VBE = 0 CONDITIONS BUW11W; BUW11AW MIN. - - - - - - - - - - - - 65 - MAX. 850 1000 400 450 3 2.5 5 10 2 4 100 +150 150 V V V V A A A A A A W UNIT °C °C CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER CONDITIONS MIN. 400 450 IC = 3 A; IB = 600 m A; see Figs 7 and 9 IC = 2.5 A; IB = 500 m A; see Figs 7 and 9 IC = 3 A; IB = 600 m A; see Fig.7 IC = 2.5 A; IB = 500 m A; see Fig.7 VCE =...