BUW12AF Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated Front view ook, halfpage BUW12F; BUW12AF handbook, halfpage 2 1 MBB008 MSB012 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW12F BUW12AF VCEO collector-emitter voltage BUW12F BUW12AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUW12F BUW12AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 5 see Fig 2 Th ≤ 25 °C; see Fig.4 6 5 8 20 34 A A A A W µs see Figs 6 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT resistive load; see Figs 12 and 13 0.8 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the...