BUW12AW Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 MBK117 BUW12W; BUW12AW 2 1 MBB008 Fig.1 Simplified outline (SOT429) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW12W BUW12AW VCEO collector-emitter voltage BUW12W BUW12AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.3 resistive load; see Figs 11 and 12 open base 400 450 1.5 8 20 125 0.8 V V V A A W µs PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors LIMITING VALUES In accordance with the...