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BUW12F - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package.

Converters Inverters Switching regulators

Motor control systems.

Key Features

  • s above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated 1 Front view ook, halfpage BUW12F; BUW12AF handbook, halfpage 2 1 MBB008 3 2 3 MSB012 Fig.1 Simplified outline (SOT199) and symbol.