BUW13F Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated Front view ook, halfpage BUW13F; BUW13AF handbook, halfpage 2 1 MBB008 MSB012 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW13F BUW13AF VCEO collector-emitter voltage BUW13F BUW13AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUW13F BUW13AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 3 and 4 tp < 20 ms; see Fig 4 Th ≤ 25 °C; see Fig.2 resistive load; see Fig.13 10 8 15 30 37 0.8 A A A A W µs see Figs 8 and 10 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the...