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BUX84F - Silicon diffused power transistors

General Description

High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base.

Converters Inverters Switching regulators

Motor control systems.

Key Features

  • Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy:.

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Other Datasheets by NXP Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BUX84F; BUX85F Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated from all pins BUX84F; BUX85F 2 1 MBB008 3 1 2 3 MBK109 Fig.1 Simplified outline (SOT186) and symbol.