BUX86P Datasheet | NXP Semiconductors

DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCESAT IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V IC = 0.2 A; IB = 20 m A Tmb ≤ 25 ˚C IC = 0.2 A; IB(on) = 20 m A TYP. BUX 0.28 MAX. 86P 800 400 1 0.5 1 42 87P 1000 450 V V V A A W µs UNIT PINNING - SOT82 PIN 1 2 3 DESCRIPTION emitter collector base PIN CONFIGURATION SYMBOL c b 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VEBO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (DC) Collector current (peak value) tp = 2 ms Base current (DC) Base current (peak value) Reverse base current (peak value)1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. BUX -40 MAX. 86P 800 400 87P 1000 450 5 0.5 1 0.2 0.3 0.3 42 150 150 V V V A A A A A W ˚C ˚C UNIT Tmb ≤ 25 ˚C 1 Turn-off current. November 1995 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 100 MAX. 3 UNIT K/W K/W STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEsat VCEsat VBEsat h FE VCEOsust PARAMETER CONDITIONS MIN. 26 400 450 TYP. 50 MAX. 100 1.0 1 0.8 1 1 125 UNIT µA m A m A V V V V V VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 5 V; IC = 0 A...