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BUX86P Datasheet Silicon Diffused Power Transistor

Manufacturer: NXP Semiconductors

Overview: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P.

General Description

High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA SYMBOL VCESM VCEO VCESAT IC ICM Ptot tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector-emitter saturation voltage Collector current (DC) Collector current peak value Total power dissipation Fall time CONDITIONS VBE = 0 V IC = 0.2 A;

IB = 20 mA Tmb ≤ 25 ˚C IC = 0.2 A;

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