BY328 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack - Also available with preformed leads for easy insertion. APPLICATIONS - Damper diode in high frequency horizontal deflection circuits up to 38 k Hz. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) Fig.1 Simplified outline (SOD64) and symbol. , a MAM104 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRSM VRRM VR IFWM PARAMETER non-repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage working peak forward current Ttp = 55 °C; lead length = 10 mm see Fig.2 Tamb = 55 °C; PCB mounting (see Fig.5); see Fig.2 Tamb = 55 °C; PCB mounting (see Fig.4); see Fig 2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. - - - - - - - - MAX. 1500 1500 1400 6.0 4.7 3.0 10 60 V V V A A A A A UNIT Tstg Tj storage temperature junction temperature - 65 - 65 +175 +150 °C °C 1996 Sep 30 Philips Semiconductors Product specification Damper diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 5 A; Tj = Tj max; see Fig.3 IF = 5 A; see Fig.3 VR = VRmax; Tj = 150 °C when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.6 when switched to IF = 5 A in 50 ns; Tj = Tj max; see Fig.7 MAX. 1.35 1.45 150 500 V V UNIT µA ns tfr forward recovery time 500 ns THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 mounted as shown in Fig.5 Note 1. Device...