BY329-1700S Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance SYMBOL QUICK REFERENCE DATA VR = 1700 V VF ≤ 1.5 V IF(peak) = 6 A (f = 16 k Hz) IF(peak) = 6 A (f = 64 k Hz) IFSM ≤ 60 A trr ≤ 170 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is intended for use in TV receivers and PC monitors. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(peak) IFRM IF(RMS) IFSM Tstg Tj PARAMETER Peak non repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Peak working forward current Peak repetitive forward current RMS forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1700 1700 1300 6 6 14 10 60 150 150 UNIT V V V A A A A A ˚C ˚C f = 16 k Hz f = 64 k Hz t = 25 µs; δ = 0.5; Tmb ≤ 125 ˚C t = 10 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air TYP. 60 MAX. 2.0 UNIT K/W K/W September 1998 Rev 1.100 Philips Semiconductors Product specification Damper diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125 ˚C VR = VRWMmax VR = VRWMmax; Tj = 125 ˚C MIN. - BY329-1700S TYP. 1.35 1.2 - MAX. 1.65 1.5 250 1.0 UNIT V V µA m A DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL Vfr tfr trr Qs...