BY329-800 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BY329 series SYMBOL QUICK REFERENCE DATA VR = 800 V/ 1000 V/ 1200 V IF(AV) = 8 A IFSM ≤ 75 A trr ≤ 135 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(AV) PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Average forward current1 square wave; δ = 0.5; Tmb ≤ 122 ˚C sinusoidal; a = 1.57; Tmb ≤ 125 ˚C CONDITIONS BY329 MIN. -800 800 800 600 MAX. -1000 -1200 1000 1200 1000 800 8 7 11 16 75 82 1200 1000 UNIT V V V A A A A A A IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 122 ˚C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature -40 - 28 150 150 A2s ˚C ˚C 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. - BY329 series TYP. 60 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A VR =...