BY359-1500S Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BY359-1500, BY359-1500S SYMBOL QUICK REFERENCE DATA VR = 1500 V VF ≤ 1.8 V / 2 V IF(RMS) = 15.7 A IFSM ≤ 60 A trr ≤ 600 ns / 350 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diode featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The device is intended for use in TV receivers and PC monitors. The BY359 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(peak) IF(RMS) IFRM IFSM PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Peak forward current RMS forward current Peak repetitive forward current Peak non-repetitive forward current Storage temperature Operating junction temperature CONDITIONS MIN. -40 MAX. 1500 1500 1300 10 7 15.7 60 60 66 150 150 UNIT V V V A A A A A A ˚C ˚C 16-32k Hz TV 31-70k Hz monitor BY359-1500 BY359-1500S Tstg Tj sinusoidal; a = 1.57 t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 ˚C prior to surge; with reapplied VRWM(max) THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.0 UNIT K/W K/W September 1998 Rev 1.300 Philips Semiconductors Product specification Damper diode fast, high-voltage STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated BY359-1500, BY359-1500S BY359-1500 SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A IF = 10 A; Tj = 150˚C VR = 1300 V VR = 1300 V; Tj = 100 ˚C TYP. 1.3 1.00 10 50 MAX. 1.8 1.5 100 300 BY359-1500S TYP. 1.5 1.25 10 100 MAX. 2.0 1.75 100 600 UNIT V V µA...