BY527 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) PARAMETER repetitive peak reverse voltage crest working reverse voltage continuous reverse voltage average forward current This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - - MAX. 1250 800 800 2.0 V V V A UNIT Ttp = 45 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 80 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 - - IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature t = 10 ms half sinewave L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.5 - - - 65 - 65 50 20 +175 +175 A m J °C °C 1996 Jun 11 Philips Semiconductors Product specification Controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF V(BR)R IR trr PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 1 A; Tj = Tj max; see Fig.6 IF = 1 A; see Fig.6 IR = 0.1 m A VR = VRWMmax; see Fig.7 VR = VRWMmax; Tj = 165 °C; see Fig.7 reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 diode capacitance VR = 0 V; f = 1 MHz; see Fig.8 MIN. - - 1250 - - - TYP. - - - - -...