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BYC10-600CT - Dual rectifier diode

General Description

Limiting values in accordance with the Absolute Maximum System (IEC 134).

Key Features

  • Dual diode.
  • Extremely fast switching.
  • Low reverse recovery current.
  • Low thermal resistance.
  • Reduces switching losses in associated MOSFET SYMBOL a1 a2 13 k2 QUICK.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Rectifier diode ultrafast, low switching loss Product specification BYC10-600CT FEATURES • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET SYMBOL a1 a2 13 k2 QUICK REFERENCE DATA VR = 600 V VF ≤ 1.75 V IO(AV) = 10 A trr = 19 ns (typ) APPLICATIONS • Active power factor correction • Half-bridge lighting ballasts • Half-bridge/ full-bridge switched mode power supplies. The BYC10-600CT is supplied in the SOT78 (TO220AB) conventional leaded package.