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BYC10-600CT Datasheet Dual Rectifier Diode

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600CT Dual rectifier diode ultrafast, low switching loss Product specification March 2001 NXP Semiconductors Rectifier diode ultrafast, low switching loss Product.

General Description

1 anode 1 2 cathode 3 anode 2 tab cathode SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS VRRM VRWM VR IO(AV) IFRM IFSM Tstg Tj Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Storage temperature Operating junction temperature Tmb ≤ 110 ˚C δ= Tmb 0.5;

with ≤ 50 ˚C1 reapplied VRRM(max);

Key Features

  • Dual diode.
  • Extremely fast switching.
  • Low reverse recovery current.
  • Low thermal resistance.
  • Reduces switching losses in associated MOSFET SYMBOL a1 a2 13 k2 QUICK.

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