BYC15x-600 Datasheet | NXP Semiconductors

description .. Hyperfast, epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features I Extremely fast switching I Low reverse recovery current I Reduces switching loss in associated MOSFET I Low thermal resistance I Isolated package 1.3 Applications I Half-bridge or full-bridge switched-mode I Continuous Current Mode (CCM) Power power supplies Factor Correction (PFC) I Half-bridge lighting ballasts 1.4 Quick reference data I VRRM ≤ 600 V I VF = 1.32 V (typ) I IF(AV) ≤ 15 A I trr = 19 ns (typ) 2. Pinning information Table 1. Pin 1 2 mb Pinning Description cathode (k) anode (a) mounting base; isolated mb k a 001aaa020 Simplified outline Symbol SOD113 (2-lead TO-220F) NXP Semiconductors Rectifier diode, hyperfast 3. Ordering information Table 2. Ordering information Package Name BYC15X-600 TO-220F Description Version plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOD113 2-lead TO-220 ‘full pack’ Type number .. 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VRRM VRWM VR IF(AV) IFRM IFSM Tstg Tj Parameter repetitive peak reverse voltage crest working reverse voltage reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature square waveform; δ = 1.0; Th ≤ 100 °C square waveform; δ = 0.5; Th ≤ 25 °C square waveform; δ = 0.5; Th ≤ 25 °C; tp = 25 µs t = 10 ms; sinusoidal waveform t = 8.3 ms; sinusoidal waveform Conditions Min - 40 Max 600 600 500 15 30 200 220 +150 150 Unit V V V A A A A °C °C BYC15X-600_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 - 29 November 2007 2 of 10 NXP Semiconductors Rectifier diode, hyperfast 5. Thermal characteristics Table 4. Symbol Rth(j-h) Rth(j-a) Thermal characteristics Parameter Conditions Min Typ 55 Max 3.6 Unit K/W K/W thermal resistance from junction to heatsink...