BYC5B-600 Datasheet | NXP Semiconductors

FEATURES - Extremely fast switching - Low reverse recovery current - Low thermal resistance - Reduces switching losses in associated MOSFET SYMBOL QUICK REFERENCE DATA VR = 600 V VF ≤ 1.75 V IF(AV) = 5 A trr = 19 ns (typ) k tab a 3 APPLICATIONS - Active power factor correction - Half-bridge lighting ballasts - Half-bridge/ full-bridge switched mode power supplies. The BYC5B-600 is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode SOT404 tab 2 cathode 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current CONDITIONS MIN. -40 MAX. 600 600 500 5 10 40 44 150 150 UNIT V V V A A A A ˚C ˚C Tstg Tj Tmb ≤ 110 ˚C δ = 0.5; with reapplied VRRM(max); Tmb ≤ 89 ˚C1 Repetitive peak forward current δ = 0.5; with reapplied VRRM(max); Tmb ≤ 89 ˚C1 Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Storage temperature Operating junction temperature THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. minimum footprint, FR4 board TYP. 50 MAX. 2.5 UNIT K/W K/W 1 it is not possible to make connection to pin 2 of the SOT404 package October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR trr trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery time Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 5 A; Tj = 150˚C IF = 10 A; Tj = 150˚C IF = 5 A; VR = 600 V VR = 500 V; Tj = 100 ˚C IF = 5 A; d IF/dt = 500 A/µs; VR = 400 V IF = 5 A; d IF/dt = 500...