BYC8DX-600 Datasheet | NXP Semiconductors

description Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits - Isolated plastic package - Low reverse recovery current - Low thermal resistance - Reduces switching losses in associated MOSFET 1.3 Applications - Continuous Current Mode (CCM) Power Factor Correction (PFC) - Half-bridge/full-bridge switched-mode power supplies - Half-bridge lighting ballasts 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current square-wave pulse; δ = 0.5 ; Th = 47 °C; see Figure 1; see Figure 2 Static characteristics VF forward voltage IF = 8 A; Tj = 150 °C; see Figure 4 Dynamic characteristics IF = 8 A; Tj = 25 °C trr reverse recovery IF = 8 A; VR = 400 V; time d IF/dt = 500 A/µs; Tj = 25 °C; see Figure 5 Min Typ Max Unit - - 600 V - - 8A - 1.5 1.85 V - 2 2.9 V - 20 - ns NXP Semiconductors 2. Pinning information Table 2. Pin 1 2 mb Pinning information Symbol Description K cathode A anode n.c. mounting base; isolated Simplified outline mb Hyperfast power diode Graphic symbol 001aaa020 3. Ordering...