BYD13G Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. DESCRIPTION MARKING Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. handbook, 4 columns BYD13 series k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. TYPE NUMBER BYD13D BYD13G BYD13J BYD13K BYD13M 13D PH 13G PH 13J PH 13K PH 13M PH MARKING CODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD13D BYD13G BYD13J BYD13K BYD13M VRWM crest working reverse voltage BYD13D BYD13G BYD13J BYD13K BYD13M VR continuous reverse voltage BYD13D BYD13G BYD13J BYD13K BYD13M - - - - - 200 400 600 800 1000 V V V V V - - - - - 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series SYMBOL IF(AV) PARAMETER average forward current CONDITIONS Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 MIN. - MAX. 1.40 A UNIT - 0.75 A IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.5 -...