BYD17G Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Shipped in 8 mm embossed tape - Smallest surface mount rectifier outline. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. MAM061 BYD17 series handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. MARKING TYPE NUMBER BYD17D BYD17G BYD17J BYD17K BYD17M 17D PH 17G PH 17J PH 17K PH 17M PH MARKING CODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD17D BYD17G BYD17J BYD17K BYD17M VRWM crest working reverse voltage BYD17D BYD17G BYD17J BYD17K BYD17M VR continuous reverse voltage BYD17D BYD17G BYD17J BYD17K BYD17M - - - - - 200 400 600 800 1000 V V V V V - - - - - 200 400 600 800 1000 V V V V V PARAMETER repetitive peak reverse voltage - - - - - 200 400 600 800 1000 V V V V V CONDITIONS MIN. MAX. UNIT 1999 Nov 11 Philips Semiconductors Product specification General purpose controlled avalanche rectifiers SYMBOL IF(AV) PARAMETER average forward current CONDITIONS Ttp = 105 °C; averaged over any 20 ms period; see Figs 2 and 4 Tamb = 65 °C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 IFSM non-repetitive peak forward current t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.5 BYD17 series MIN. - MAX. UNIT 1.5 A - 0.6 A - 20 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -...