BYD33K Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. handbook, 4 columns BYD33 series and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V VR continuous reverse voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V IF(AV) average forward current BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM repetitive peak forward current BYD33D to M BYD33U and V Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 °C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 °C; see Figs 6 and 7 - - 12 11 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 1.30 1.26 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT 0.70 0.67 1996 Sep 18 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD33D to M BYD33U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off - - - 65 see Figs 12 and 13 - 65 CONDITIONS Tamb = 65 °C; see Figs 8 and 9 - - - BYD33 series MIN. MAX. 7 6 20 A A...