BYD52G Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. MGL571 BYD52 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec™(1) technology. This package is handbook, k halfpage a Fig.1 Simplified outline (SOD120) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD52D BYD52G BYD52J VR continuous reverse voltage BYD52D BYD52G BYD52J IF(AV) average forward current Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.6; averaged over any 20 ms period; see Fig.2 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see fig.3 - - - - 200 400 600 0.47 V V V A PARAMETER repetitive peak reverse voltage - - - 200 400 600 V V V CONDITIONS MIN. MAX. UNIT IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature - - 65 - 65 5 +175 +175 A °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time VR = VRRMmax VR = VRRMmax; Tj = 165 °C; see Fig.5 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.7 CONDITIONS IF = 1 A; see Fig.4 MAX. 3.6 1 100 30 V µA µA ns UNIT 1998 Dec 03 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche rectifiers THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS BYD52 series VALUE 150 UNIT K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm, pitch 5 mm; see Fig.6. 1998 Dec 03 Philips Semiconductors Preliminary specification Fast soft-recovery controlled avalanche...