BYD53J Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. handbook, 4 columns BYD53 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. The SOD81 package is k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V VR continuous reverse voltage BYD53D BYD53G BYD53J BYD53K BYD53M BYD53U BYD53V IF(AV) average forward current BYD53D to M BYD53U and V IF(AV) average forward current BYD53D to M BYD53U and V IFRM repetitive peak forward current BYD53D to M BYD53U and V Ttp = 55 °C; lead length = 10 mm see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 °C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 °C; see Figs 6 and 7 - - 6.5 8.25 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 0.75 0.85 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT 0.40 0.45 1998 Dec 04 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD53D to M BYD53U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off see Fig.12 CONDITIONS Tamb = 65 °C; see Figs 8 and 9 - - - BYD53 series MIN. MAX. 3.6 4.45 5 A A A UNIT ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -...