BYD57D Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Shipped in 8 mm embossed tape - Smallest surface mount rectifier outline. MAM061 BYD57 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. The SOD87 is handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V VR continuous reverse voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IF(AV) average forward current BYD57D to M BYD57U and V IF(AV) average forward current BYD57D to M BYD57U and V IFRM repetitive peak forward current BYD57D to M BYD57U and V Ttp = 85 °C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 85 °C; see Figs 6 and 7 - - 8.5 11 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 1.0 1.2 0.4 0.4 V V V V V V V A A A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1999 Nov 11 Philips Semiconductors Product specification Ultra-fast soft-recovery controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD57D to M BYD57U and V IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.12 t = 10 ms half sinewave; Tj = 25 °C prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off CONDITIONS Tamb = 60 °C; see Figs 8 and 9 - - - - - 65 - 65 BYD57 series MIN. MAX....