BYD72F Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. MGL571 BYD72 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD120 package through Implotec™(1) technology. This package is handbook, k halfpage a Fig.1 Simplified outline (SOD120) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G VR continuous reverse voltage BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G IF(AV) average forward current BYD72A to D BYD72E to G IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature see Fig.7 Tamb = 25 °C; printed-circuit board mounting, pitch 5 mm, see Fig.8; averaged over any 20 ms period; see Figs 2 and 3 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax - - - - - - - - - - - 65 - 65 50 100 150 200 250 300 400 1.02 0.95 15 +175 +175 V V V V V V V A A A °C °C PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1998 Dec 03 Philips Semiconductors Preliminary specification Ultra fast low-loss controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD72A to D BYD72E to G IR trr reverse current reverse recovery time BYD72A to D BYD72E to G VFRM forward recovery voltage BYD72A to D BYD72E to G THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS when switched to IF = 1 A in 50 ns VR = VRRMmax VR = VRRMmax; Tj = 165 °C; see Fig.6 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 CONDITIONS IF = 1 A; see Figs 4 and 5 BYD72 series MAX....