BYD73B Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. handbook, 4 columns BYD73 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD81 package through Implotec™(1) technology. This package is k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G VR continuous reverse voltage BYD73A BYD73B BYD73C BYD73D BYD73E BYD73F BYD73G IF(AV) average forward current BYD73A to D BYD73E to G IF(AV) average forward current BYD73A to D BYD73E to G Ttp = 55 °C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - - - - - - - - - - - 50 100 150 200 250 300 400 1.75 1.70 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1.00 0.95 1996 Sep 18 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD73A to D BYD73E to G IFRM repetitive peak forward current BYD73A to D BYD73E to G IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off Tamb = 60 °C; see Figs 8 and 9 - - - CONDITIONS Ttp = 55 °C; see Figs 6 and 7 - - BYD73 series MIN. MAX. 14 15 8.5 9.5 25 A A A A A UNIT ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction...