BYD77D Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Shipped in 8 mm embossed tape - Smallest surface mount rectifier outline. MAM061 BYD77 series hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass SOD87 package through Implotec™(1) technology. This package is handbook, 4 columns k a Fig.1 Simplified outline (SOD87) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G VR continuous reverse voltage BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G IF(AV) average forward current BYD77A to D BYD77E to G IF(AV) average forward current BYD77A to D BYD77E to G Ttp = 105 °C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 °C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - - - - - - - - - - - 50 100 150 200 250 300 400 2.00 1.85 0.85 0.80 V V V V V V V A A A A PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT 1999 Nov 15 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYD77A to D BYD77E to G IFRM repetitive peak forward current BYD77A to D BYD77E to G IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = 25 °C prior to surge; inductive load switched off Tamb = 60 °C; see Figs 8 and 9 - - - - - 65 - 65 CONDITIONS Ttp = 105 °C; see Figs 6 and 7 - - BYD77 series MIN. MAX. 15 13 8.5 8.0 25 10 +175 +175...