BYG85B Datasheet | NXP Semiconductors

FEATURES - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - UL 94V-O classified plastic package - Shipped in 12 mm embossed tape. handbook, 4 columns The well-defined void-free case is of a transfer-moulded thermo-setting plastic. DESCRIPTION DO-214AC surface mountable package with glass passivated chip. cathode band k a Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC; SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current average forward current Ttp = 100 °C; averaged over any 20 ms period; see Figs 2 and 7 Tamb = 60 °C; AL2O3 PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Tamb = 60 °C; epoxy PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 Ttp = 100 °C; see Fig.3 Tamb = 60 °C; AL2O3 PCB mounting; see Fig.5 Tamb = 60 °C; epoxy PCB mounting; see Fig.6 CONDITIONS MIN. - - - - MAX. 100 100 2.5 1.3 V V A A UNIT IF(AV) average forward current - 0.98 IFRM IFRM IFRM IFSM Tstg Tj repetitive peak forward current repetitive peak forward current repetitive peak forward current - - - - - 65 - 65 23 12 8.5 35 +175 +175 A A A A °C °C non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax storage temperature junction temperature 1998 Nov 25 Philips Semiconductors Product specification Fast soft-recovery rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 2 A; Tj = Tj max; see Fig.8 IF = 2 A; see Fig.8 IR = 0.1 m A VR = VRRMmax; see Fig.9 VR = VRRMmax; Tj = 165 °C; see Fig.9 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.13 f = 1 MHz; VR = 0; see...