BYM99 Datasheet | NXP Semiconductors

FEATURES - Glass passivated - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack - Also available with preformed leads for easy insertion. DESCRIPTION Rugged glass SOD64 package, using a high temperature alloyed construction. 2/3 pagek (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current , This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. a MAM104 Fig.1 Simplified outline (SOD64) and symbol. CONDITIONS MIN. - - MAX. 600 600 1.8 V V A UNIT Ttp = 50 °C; lead length = 10 mm see Fig. 2; averaged over any 20 ms period; see also Fig 6 Tamb = 60 °C; PCB mounting (see Fig.10); see Fig. 3; averaged over any 20 ms period; see also Fig. 6 - - IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 50 °C; see Fig. 4 Tamb = 60 °C; see Fig. 5 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off - - - 15 7 40 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - - 65 - 65 10 +175 +150 m J °C °C 1996 Feb 19 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 3 A; Tj = Tj max; see Fig. 7 IF = 3 A; see Fig. 7 IR = 0.1 m A VR = VRRMmax; see Fig. 8 VR = VRRMmax; Tj = 150 °C; see Fig. 8 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig. 12 f = 1 MHz; VR = 0 V; see Fig. 9 when switched from IF = 1 A to VR ≥ 30 V and d IF/dt = - 1 A/µs;...