BYQ28EB Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYQ28E, BYQ28EB, BYQ28ED series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.895 V IO(AV) = 10 A IRRM = 0.2 A trr ≤ 25 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ28E series is supplied in the SOT78 conventional leaded package. The BYQ28EB series is supplied in the SOT404 surface mounting package. The BYQ28ED series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode 1 anode 2 cathode SOT78 (TO220AB) tab SOT404 tab SOT428 tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Peak non-repetitive reverse surge current per diode Operating junction temperature Storage temperature square wave; δ = 0.5; Tmb ≤ 119 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 tp = 100 µs CONDITIONS BYQ28E/ BYQ28EB/ BYQ28ED - 40 MIN. -150 150 150 150 10 10 50 55 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C 1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. October 1998 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS BYQ28E, BYQ28EB, BYQ28ED series MIN. - MAX....