BYQ28X-200 Datasheet | NXP Semiconductors

description Dual ultrafast epitaxial rectifier diodes in a SOT186A (TO-220F) isolated plastic package. 1.2 Features and benefits - Fast switching - Guaranteed ESD capability - High thermal cycling performance - Low on-state losses - Soft recovery minimizes power-consuming oscillations 1.3 Applications - Output rectifiers in high-frequency switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter VRRM repetitive peak reverse voltage IO(AV) average output current IFRM repetitive peak forward current Dynamic characteristics trr reverse recovery time Static characteristics VF forward voltage Electrostatic discharge VESD electrostatic discharge voltage Conditions SQW; δ = 0.5; Th ≤ 92 °C; both diodes conducting; see Figure 1; see Figure 2 SQW; δ = 0.5; tp = 25 µs; Th ≤ 92 °C; per diode IF = 1 A; VR = 30 V; d IF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; see Figure 5 IF = 5 A; Tj = 150 °C; see Figure 4 HBM; C = 250 p F; R = 1.5 kΩ; all pins Min Typ Max Unit - - 200 V - - 10 A - - 10 A - 15 25 ns - 0.8 0.895 V - - 8 k V NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2K cathode 3 A2 anode 2 mb n.c. mounting base; isolated Dual ultrafast rugged rectifier...