BYQ30E Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYQ30E, BYQ30EB, BYQ30ED series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.95 V IO(AV) = 16 A IRRM = 0.2 A trr ≤ 25 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ30E series is supplied in the SOT78 conventional leaded package. The BYQ30EB series is supplied in the SOT404 surface mounting package. The BYQ30ED series is supplied in the SOT428 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode 1 anode 2 cathode SOT78 (TO220AB) tab SOT404 tab SOT428 tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tj Tstg Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Peak non-repetitive reverse surge current per diode Operating junction temperature Storage temperature square wave; δ = 0.5; Tmb ≤ 104 ˚C square wave; δ = 0.5; Tmb ≤ 104 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) tp = 2 µs; δ = 0.001 tp = 100 µs CONDITIONS BYQ30E/ BYQ30EB/ BYQ30ED - 40 MIN. -150 150 150 150 16 16 80 88 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C 1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages. October 1998 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS BYQ30E, BYQ30EB, BYQ30ED series MIN. - MAX....