BYQ40EW-200 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYQ40EW series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 40 A IRRM ≤ 0.2 A trr ≤ 30 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ40EW series is supplied in the conventional leaded SOT429 (TO247) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode SOT429 (TO247) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode square wave δ = 0.5; Tmb ≤ 110 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 110 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature CONDITIONS BYQ40EW -40 MIN. -150 150 150 150 40 40 300 325 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 p F; R = 1.5 kΩ MIN. MAX. 8 UNIT k V December 1998 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. - BYQ40EW series TYP. 45 MAX. 1.05 0.75 - UNIT K/W K/W K/W ELECTRICAL...