BYQ63 Datasheet | NXP Semiconductors

Features - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed minimum turn-on time for absorbing forward current transients and oscillations - Specially designed as rectifier in the auxiliary power supply in e.g. switched mode power supplies - Available in ammo-pack - Also available with preformed leads for easy insertion. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. The SOD57 is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - MAX. 300 300 1.05 V V A UNIT averaged over any 20 ms period; Ttp = 85 °C; lead length = 10 mm; see Fig.2; see also Fig.4 averaged over any 20 ms period; Tamb = 60 °C; PCB mounting (Fig.8); see Fig.3; see also Fig.4 - - IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 85 °C Tamb = 60 °C t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax - - - 9.6 6.4 30 Tstg Tj storage temperature junction temperature - 65 - 65 +175 +175 °C °C 1998 Dec 04 Philips Semiconductors Product specification Ripple blocking diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 VR = VRRMmax; see Fig.6 VR = VRRMmax; Tj = 165 °C; see Fig.6 tfr ton forward recovery time turn-on time when switched to IF = 5 A in 50 ns; see Fig.9 when switched from VF = 0 to VF = 3 V; measured between 10% and 90% of IFmax; see Fig.11 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.11 f = 1 MHz;...