BYR29-800 Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYR29 series SYMBOL QUICK REFERENCE DATA VR = 500 V/ 600 V/ 700 V / 800 V k 1 a 2 VF ≤ 1.5 V IF(AV) = 8 A trr ≤ 75 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYR29 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IF(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average forward current1 square wave; δ = 0.5; Tmb ≤ 115 ˚C Repetitive peak forward current t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C Non-repetitive peak forward t = 10 ms current t = 8.3 ms sinusoidal; with reapplied VRRM(max) Storage temperature Operating junction temperature CONDITIONS BYR29 -40 MIN. -500 500 500 500 MAX. -600 600 600 600 8 16 60 66 150 150 -700 700 700 700 -800 800 800 800 UNIT V V V A A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.5 UNIT K/W K/W 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150˚C IF = 20 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; d IF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; d IF/dt = 100 A/µs IF = 10...