BYT28-300 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BYT28 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.05 V IO(AV) = 10 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT28 series is supplied in the conventional leaded SOT78 (TO220AB) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IO(AV) IFSM PARAMETER CONDITIONS BYT28 Repetitive peak reverse voltage Continuous reverse voltage Tmb ≤ 147˚C Average rectified output current (both diodes conducting)1 Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 10 50 55 150 150 -500 500 500 UNIT V V A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 4.5 3.0 UNIT K/W K/W K/W 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 5 A; Tj = 150˚C IF = 10 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; d IF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; d IF/dt = 100 A/µs IF = 5 A to VR ≥ 30 V; d...