BYT79-500 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BYT79 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V k 1 a 2 VF ≤ 1.05 V IF(AV) = 14 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT79 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IF(AV) IFSM PARAMETER Peak repetitive reverse voltage Continuous reverse voltage Average forward current1 Non-repetitive peak forward current. Storage temperature Operating junction temperature CONDITIONS BYT79 Tmb ≤ 147˚C square wave; δ = 0.5; Tmb ≤ 117 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 14 130 143 150 150 -500 500 500 UNIT V V A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.0 UNIT K/W K/W 1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150˚C IF = 30 A VR = VRRM VR = VRRM; Tj = 100 ˚C IF = 2 A to VR ≥ 30 V; d IF/dt = 20 A/µs IF = 1 A to VR ≥ 30 V; d IF/dt = 100 A/µs IF = 10 A to VR ≥ 30 V; d IF/dt = 50 A/µs; Tj = 100˚C IF = 10 A; d IF/dt = 10 A/µs MIN. - BYT79 series TYP. 0.90 1.17 5.0 0.2 50 50 4.0 2.5 MAX. 1.05 1.38 50 0.8 60...