BYV1100 Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack. handbook, 4 columns BYV1100 and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs.2 and 4 Tamb = 60 °C; printed-circuit board mounting, see Fig.12; averaged over any 20 ms period; see Figs.3 and 4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C; see Fig.6 Tamb = 60 °C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax CONDITIONS MIN. - - - MAX. 100 100 1.7 V V A UNIT - 1.0 - - - 15 9.5 15 Tstg Tj storage temperature junction temperature - 65 - 65 +175 +175 °C °C 1998 Dec 03 Philips Semiconductors Product specification Fast soft-recovery rectifier ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 1 A; Tj = Tj max; see Fig.5 IF = 1 A; see Fig.5 IR = 0.1 m A VR = VRRMmax; see Fig.8 VR = VRRMmax; Tj = 165 °C; see Fig.8 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 f = 1 MHz; VR = 0; see Fig.9 when switched from IF = 1 A to VR ≥ 30 V and d IF/dt = - 1 A/µs; see Fig.11 MIN. - - 120 - -...