BYV118-35 Datasheet | NXP Semiconductors

Features - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYV118, BYV118B series SYMBOL QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V a1 1 k 2 a2 3 IO(AV) = 10 A VF ≤ 0.6 V GENERAL DESCRIPTION Dual, mon cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV118 series is supplied in the SOT78 conventional leaded package. The BYV118B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV118BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (both diodes conducting) Repetitive peak forward current (per diode) Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 108 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C square wave; δ = 0.5; Tmb ≤ 127 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 35 35 35 35 35 MAX. 40 40 40 40 40 10 10 100 110 1 150 175 45 45 45 45 45 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 of the SOT404 pckage. May 1998 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient...