BYV143F-40 Datasheet | NXP Semiconductors

DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and zero switching losses are important. BYV143F series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) PARAMETER BYV143FRepetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) MAX. 35 35 0.62 20 MAX. 40 40 0.62 20 MAX. 45 45 0.62 20 UNIT V V A PINNING - SOT186 PIN 1 2 3 DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) PIN CONFIGURATION case SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IO(RMS) IFRM IFSM PARAMETER CONDITIONS MIN. -35 35 35 35 MAX. -40 40 40 40 20 20 30 100 110 -45 45 45 45 UNIT V V V A A A A A Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Ths ≤ 112 ˚C Average output current (both diodes conducting) RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; δ = 0.5; Ths ≤ 87 ˚C I2t IRRM IRSM Tstg Tj t = 25 µs; δ = 0.5; Ths ≤ 87 ˚C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 ˚C prior to surge; with reapplied VRRM(max) I2t for fusing t = 10 ms Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode. Non-repetitive peak reverse tp = 100 µs current per diode. Storage temperature Operating junction temperature -65 - 50 1 1 175 150 A2s A A ˚C ˚C August 1996 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. ≤ 65% ; clean...