BYV160 Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 3 page k (Datasheet) Fig.1 Simplified outline (SOD57) and symbol. a MAM047 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 60 °C; lead length = 10 mm; see Fig.5; averaged over any 20 ms period; see Fig.6 t = 10 ms half sine wave; Tj = 25 °C; VR = VRRMmax see Fig.7 CONDITIONS - - - MIN. MAX. 600 600 2 V V A UNIT IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature - - 65 - 65 40 +175 +175 A °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL VF IR trr PARAMETER forward voltage reverse current reverse recovery time CONDITIONS IF = 2 A; Tj = Tj max; see Fig.2 IF = 2 A; see Fig.2 VR = VRRMmax; see Fig.3 VR = VRRMmax; Tj = 150 °C; see Fig.3 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A MAX. 1.00 1.20 5 150 50 V V µA µA ns UNIT 2000 Feb 01 Philips Semiconductors Product specification Ultra fast low-loss rectifier THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 46 100 UNIT K/W K/W 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8. For more information please refer to the ‘General Part of associated Handbook’. 2000 Feb 01 Philips Semiconductors Product...