BYV2100 Datasheet | NXP Semiconductors

- Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - MAX. 100 100 2.0 V V A UNIT Ttp = 80 °C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 Tamb = 60 °C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4 - - IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 80 °C; see Fig.6 Tamb = 60 °C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj = Tj max prior to surge; inductive load switched off - - - 18 12 50 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - - 65 - 65 20 +175 +175 m J °C °C 1996 Oct 07 Philips...