BYV27-600 Datasheet | NXP Semiconductors

Features - Glass passivated - High maximum operating temperature - Low leakage current - Excellent stability - Guaranteed avalanche energy absorption capability - Available in ammo-pack. DESCRIPTION Rugged glass SOD57 package, using a high temperature alloyed construction. BYV27 series This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM PARAMETER repetitive peak reverse voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 VR continuous reverse voltage BYV27-50 BYV27-100 BYV27-150 BYV27-200 BYV27-300 BYV27-400 BYV27-500 BYV27-600 IF(AV) average forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 IF(AV) average forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 a MAM047 Fig.1 Simplified outline (SOD57) and symbol. CONDITIONS MIN. - - - - - - - - - - - - - - - - MAX. 50 100 150 200 300 400 500 600 50 100 150 200 300 400 500 600 2.0 1.9 1.6 1.30 1.25 1.10 V V V V V V V V V V V V V V V V A A A A A A UNIT Ttp = 85 °C; lead length = 10 mm; see Figs 2, 3 and 4; averaged over any 20 ms period; see also Figs 14, 15 and 16 Tamb = 60 °C; printed-circuit board mounting (see Fig. 25); see Figs 5, 6 and 7; averaged over any 20 ms period; see also Figs 14, 15 and 16 - - - - - - 1997 Nov 24 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers SYMBOL IFRM PARAMETER repetitive peak forward current BYV27-50 to 400 BYV27-500 and 600 IFRM repetitive peak forward current BYV27-50 to 200 BYV27-300 and 400 BYV27-500 and 600 IFSM non-repetitive peak forward current BYV27-50 to 400 BYV27-500 and 600 ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig. 17 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 m H; Tj...