BYV29F-500 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes ultrafast Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Isolated mounting tab BYV29F, BYV29X series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V k 1 a 2 VF ≤ 1.03 V IF(AV) = 9 A trr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING PIN 1 2 tab DESCRIPTION cathode (k) anode (a) isolated SOD100 case SOD113 case LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IF(AV) IFSM PARAMETER Peak repetitive reverse voltage Continuous reverse voltage Average forward current2 Non-repetitive peak forward current Storage temperature Operating junction temperature CONDITIONS BYV29F/BYV29X Ths ≤ 138˚C1 square wave; δ = 0.5; Ths ≤ 90 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 9 100 110 150 150 -500 500 500 UNIT V V A A A ˚C ˚C Tstg Tj 1 Ths de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 Philips Semiconductors Product specification Rectifier diodes ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from all terminals to external heatsink CONDITIONS BYV29F, BYV29X...