BYV32-100 Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated high efficiency dual rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential. BYV32 series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV32Repetitive peak reverse voltage Forward voltage Output current (both diodes conducting) Reverse recovery time MAX. 100 100 0.85 20 25 MAX. 150 150 0.85 20 25 MAX. 200 200 0.85 20 25 UNIT V V A ns PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) anode 2 (a) cathode (k) PIN CONFIGURATION tab SYMBOL a1 a2 k 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Output current (both diodes conducting)1 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Storage temperature Operating junction temperature square wave δ = 0.5; Tmb ≤ 115 ˚C sinusoidal a = 1.57; Tmb ≤ 118 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) t = 10 ms CONDITIONS MIN. -40 -100 100 100 100 MAX. -150 150 150 150 20 18 28 20 125 137 78 150 150 -200 200 200 200 UNIT V V V A A A A A A A2s ˚C ˚C IO(RMS) IFRM IFSM I2t Tstg Tj 1 Neglecting switching and reverse current losses October 1994 1 Rev 1.100 Philips Semiconductors Product specification Rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air MIN. - BYV32 series TYP. 60 MAX. 2.4 1.6 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated...