BYV34-400 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Dual rectifier diodes ultrafast Features - Low forward volt drop - Fast switching - Soft recovery characteristic - High thermal cycling performance - Low thermal resistance BYV34 series SYMBOL QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V a1 1 k 2 a2 3 VF ≤ 1.05 V IO(AV) = 20 A trr ≤ 60 ns SOT78 (TO220AB) GENERAL DESCRIPTION Dual, mon cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV34 series is supplied in the conventional leaded SOT78 (TO220AB) package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 cathode anode 2 cathode tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode. Storage temperature Operating junction temperature CONDITIONS BYV34 Tmb ≤ 138˚C square wave; δ = 0.5; Tmb ≤ 115 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 115 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 300 MAX. -400 400 400 400 20 20 120 132 150 150 -500 500 500 500 UNIT V V V A A A A ˚C ˚C Tstg Tj THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS per diode both diodes conducting in free air. MIN. TYP. 60 MAX. 2.4 1.6 UNIT K/W K/W K/W 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.400 Philips Semiconductors Product specification Dual rectifier diodes ultrafast ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak...