BYV42E-200 Datasheet | NXP Semiconductors

Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged Features - Low forward volt drop - Fast switching - Soft recovery characteristic - Reverse surge capability - High thermal cycling performance - Low thermal resistance BYV42E, BYV42EB series SYMBOL QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.85 V IO(AV) = 30 A IRRM = 0.2 A trr ≤ 28 ns a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV42E series is supplied in the SOT78 conventional leaded package. The BYV42EB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV42E / BYV42EB Tmb ≤ 144˚C -40 MIN. -150 150 150 150 30 30 150 160 0.2 0.2 150 150 MAX. -200 200 200 200 UNIT V V V A A A A A A ˚C ˚C IRRM IRSM Tstg Tj square wave δ = 0.5; Tmb ≤ 108 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 108 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature 1. It is not possible to make connection to pin 2 of the SOT404 package 2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting tab. July 1998 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast,...