BYV74-300 Datasheet | NXP Semiconductors

DESCRIPTION Glass passivated, high efficiency rectifier diodes in a plastic envelope featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general, where both low conduction losses and low switching losses are essential. BYV74 series QUICK REFERENCE DATA SYMBOL VRRM VF IO(AV) trr PARAMETER BYV74Repetitive peak reverse voltage Forward voltage Average output current (both diodes conducting) Reverse recovery time MAX. 300 300 1.12 30 60 MAX. 400 400 1.12 30 60 MAX. 500 500 1.12 30 60 UNIT V V A ns PINNING - SOT93 PIN 1 2 3 tab DESCRIPTION Anode 1 (a) Cathode (k) Anode 2 (a) Cathode (k) PIN CONFIGURATION tab SYMBOL a1 1 k2 1 2 3 a2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) PARAMETER CONDITIONS MIN. -40 -300 300 300 300 MAX. -400 400 400 400 30 27 43 30 150 160 112 150 150 -500 500 500 500 UNIT V V V A A A A A A A2s ˚C ˚C Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb ≤ 136˚C Average output current (both diodes conducting)1 RMS output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode. I2t for fusing Storage temperature Operating junction temperature square wave; δ = 0.5; Tmb ≤ 94 ˚C sinusoidal; a = 1.57; Tmb ≤ 98 ˚C t = 25 µs; δ = 0.5; Tmb ≤ 94 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) t = 10 ms IO(RMS) IFRM IFSM I2t Tstg Tj 1 Neglecting switching and reverse current losses. For output currents in excess of 20 A, connection should be made to the exposed metal mounting base. August 1996 1 Rev 1.200 Philips Semiconductors Product specification Dual rectifier diodes ultrafast THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient...